This standard was transferred to SEMI (www.semi.org) May 2003.

1.1 This test method covers the determination of total sodium, aluminum, potassium, and iron on the surface of mirror-polished single crystal silicon and silicon epi substrates using secondary ion mass spectrometry (SIMS). This test method measures the total amount of each metal, because this test method is independent of the metal's chemistry or electrical activity.

1.2 This test method can be used for silicon with all dopant species and dopant concentrations.

1.3 This test method is especially designed to be used for surface metal contamination that is located within approximately 5 nm of the surface of the wafer.

1.4 This test method is especially useful for determining the surface metal areal densities in the native oxide or chemically grown oxide of polished silicon substrates after cleaning.

1.5 This test method is useful for sodium, aluminum, potassium, and iron areal densities between 10⁹ and 10¹⁴ atoms/cm². The limit of detection is determined by either the BLANK value or by count rate limitations, and may vary with instrumentation.

1.6 This test method is complementary to:

• 1.6.1 Total reflection X-ray fluorescence (TXRF), that can detect higher atomic number Z, surface metals such as iron, but does not have useful (10¹¹ atoms/cm²) detection limits for sodium, potassium, and aluminum on silicon.
• 1.6.2 Electron spectroscopy for chemical analysis and Auger electron spectroscopy that can detect metal surface areal densities down to the order of 10¹² to 10¹³ atoms/cm².
• 1.6.3 Vapor phase decomposition (VPD) of surface metals followed by atomic absorption spectroscopy (AAS) or inductively coupled plasma mass spectrometry (ICP-MS) of the VPD residue, where the metal detection limits are 10⁸ to 10¹⁰ atoms/cm². There is no spatial information available and the VPD preconcentration of metals is dependent upon the chemistry of each metal.

1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

This standard was transferred to SEMI (www.semi.org) May 2003.

1.1 This test method covers the determination of total sodium, aluminum, potassium, and iron on the surface of mirror-polished single crystal silicon and silicon epi substrates using secondary ion mass spectrometry (SIMS). This test method measures the total amount of each metal, because this test method is independent of the metal's chemistry or electrical activity.

1.2 This test method can be used for silicon with all dopant species and dopant concentrations.

1.3 This test method is especially designed to be used for surface metal contamination that is located within approximately 5 nm of the surface of the wafer.

1.4 This test method is especially useful for determining the surface metal areal densities in the native oxide or chemically grown oxide of polished silicon substrates after cleaning.

1.5 This test method is useful for sodium, aluminum, potassium, and iron areal densities between ¹⁰9 and ¹⁰14 atoms/cm². The limit of detection is determined by either the BLANK value or by count rate limitations, and may vary with instrumentation.

1.6 This test method is complementary to:

• 1.6.1 Total reflection X-ray fluorescence (TXRF), that can detect higher atomic number Z, surface metals such as iron, but does not have useful (¹⁰11 atoms/cm²) detection limits for sodium, potassium, and aluminum on silicon.
• 1.6.2 Electron spectroscopy for chemical analysis and Auger electron spectroscopy that can detect metal surface areal densities down to the order of ¹⁰12 to ¹⁰13 atoms/cm².
• 1.6.3 Vapor phase decomposition (VPD) of surface metals followed by atomic absorption spectroscopy (AAS) or inductively coupled plasma mass spectrometry (ICP-MS) of the VPD residue, where the metal detection limits are ¹⁰8 to ¹⁰10 atoms/cm². There is no spatial information available and the VPD preconcentration of metals is dependent upon the chemistry of each metal.

1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.