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1.1 This test method covers the measurement of the unsaturated sink current of transistor-transistor logic (TTL) devices under specified conditions.
1.2 Units — The values stated in the International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
1.1 This test method covers the measurement of the unsaturated sink current of transistor-transistor logic (TTL) devices under specified conditions.
1.2 Units—The values stated in the International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Unsaturated sink current is a special parameter that is closely related to the gain of the output transistor of TTL circuits.
This parameter is particularly useful in evaluating neutron degradation in TTL devices because it changes smoothly as the device degrades, and exhibits larger changes at moderate radiation levels than the standard electrical parameters.
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