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BSI BS EN 60749-27:2006+A1:2012

Semiconductor devices. Mechanical and climatic test methods -- Electrostatic discharge (ESD) sensitivity testing. Machine model (MM)
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BSI BS EN 60749-27:2006+A1:2012

Semiconductor devices. Mechanical and climatic test methods -- Electrostatic discharge (ESD) sensitivity testing. Machine model (MM)

PUBLISH DATE 2013
PAGES 16
BSI BS EN 60749-27:2006+A1:2012

This part of IEC 60749 establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposureto a defined machine model (MM) electrostatic discharge (ESD). It may be used as an alternative test method to the human body model ESD test method. The objective is to provide reliable, repeatable ESD test results so that accurate classifications can be performed.

This test method is applicable to all semiconductor devices and is classified as destructive.

ESD testing of semiconductor devices is selected from this test method, the human body model (HBM – see IEC 60749-26) or other test methods in the IEC 60749 series. The MM and HBM test methods produce similar but not identical results. Unless otherwise specified, the HBM test method is the one selected.

NOTE 1 This test method does not truly simulate discharge from real machines or metallic tools because the test method uses high parasitic inductance of the test circuit, whereas real machines and metallic tools, whose discharge rise time is approximately 100 ps, have no inductance.

NOTE 2 Certain clauses in this test method are in accordance with IEC 61340-3-2.

SDO BSI: British Standards Institution
Document Number EN 60749-27
Publication Date Jan. 31, 2013
Language en - English
Page Count
Revision Level 1
Supercedes
Committee EPL/47
Publish Date Document Id Type View
Sept. 29, 2006 BS EN 60749-27:2006 Revision
Jan. 31, 2013 BS EN 60749-27:2006+A1:2012 Consolidated
Jan. 1, 2013 BS EN 60749-27:2006:2012 Consolidated