Logo
Login Sign Up
Current Revision

BSI BS IEC 60747-9:2019

Semiconductor devices -- Discrete devices. Insulated-gate bipolar transistors (IGBTs)
Best Price Guarantee
Instant

$466.15

2-5 Days

$466.15

SAVE 10%

$839.07


Sub Total (1 Item(s))

$ 0.00

Estimated Shipping

$ 0.00

Total (Pre-Tax)

$ 0.00


View in Library
or
British Standards Institution Logo

BSI BS IEC 60747-9:2019

Semiconductor devices -- Discrete devices. Insulated-gate bipolar transistors (IGBTs)

PUBLISH DATE 2019
PAGES 82
BSI BS IEC 60747-9:2019

This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

SDO BSI: British Standards Institution
Document Number IEC 60747-9
Publication Date Nov. 22, 2019
Language en - English
Page Count
Revision Level
Supercedes
Committee EPL/47
Loading...

Failed to load document history.

Publish Date Document Id Type View