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BSI BS IEC 62047-29:2017

Semiconductor devices. Micro-electromechanical devices -- Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
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BSI BS IEC 62047-29:2017

Semiconductor devices. Micro-electromechanical devices -- Electromechanical relaxation test method for freestanding conductive thin-films under room temperature

PUBLISH DATE 2018
PAGES 14
BSI BS IEC 62047-29:2017
IEC 62047-29:2017(E) specifies a relaxation test method for measuring electromechanical properties of freestanding conductive thin films for micro-electromechanical systems (MEMS) under controlled strain and room temperature. Freestanding thin films of conductive materials are extensively utilized in MEMS, opto-electronics, and flexible/wearable electronics products. Freestanding thin films in the products experience external and internal stresses which could be relaxed even under room temperature during a period of operation, and this relaxation leads to time-dependent variation of electrical performances of the products. This test method is valid for isotropic, homogeneous, and linearly viscoelastic materials.
SDO BSI: British Standards Institution
Document Number IEC 62047-29
Publication Date March 15, 2018
Language en - English
Page Count
Revision Level
Supercedes
Committee EPL/47
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