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BSI BS IEC 62047-35:2019

Semiconductor devices. Micro-electromechanical devices -- Test method of electrical characteristics under bending deformation for flexible electromechanical devices
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BSI BS IEC 62047-35:2019

Semiconductor devices. Micro-electromechanical devices -- Test method of electrical characteristics under bending deformation for flexible electromechanical devices

PUBLISH DATE 2021
PAGES 24
BSI BS IEC 62047-35:2019

This part of IEC 62047 specifies the test method of electrical characteristics under bending deformation for flexible electromechanical devices. These devices include passive micro components and/or active micro components on the flexible film or embedded in the flexible film. The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 ÎĽm to 1 mm, but these are not limiting values. The test method is so designed as to bend devices in a quasi-static manner monotonically up to the maximum possible curvature, i.e. until the device is completely folded, so that the entire degradation behaviour of the electric property under bending deformation is obtained. This document is essential to estimate the safety margin under a certain bending deformation and indispensable for reliable design of the product employing these devices.

SDO BSI: British Standards Institution
Document Number IEC 62047-35
Publication Date April 20, 2021
Language en - English
Page Count 24
Revision Level
Supercedes
Committee EPL/47
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