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BSI BS IEC 62373-1:2020

Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) -- Fast BTI test for MOSFET
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BSI BS IEC 62373-1:2020

Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) -- Fast BTI test for MOSFET

PUBLISH DATE 2023
PAGES 26
BSI BS IEC 62373-1:2020
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
SDO BSI: British Standards Institution
Document Number IEC 62373-1
Publication Date March 30, 2023
Language en - English
Page Count
Revision Level
Supercedes
Committee EPL/47
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