Logo
Login Sign Up
Current Revision

BSI BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Classification of defects
Best Price Guarantee
Instant

$319.84

2-5 Days

$319.84

SAVE 10%

$575.71


Sub Total (1 Item(s))

$ 0.00

Estimated Shipping

$ 0.00

Total (Pre-Tax)

$ 0.00


View in Library
or
British Standards Institution Logo

BSI BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Classification of defects

PUBLISH DATE 2019
PAGES 26
BSI BS IEC 63068-1:2019
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

 

SDO BSI: British Standards Institution
Document Number IEC 63068-1
Publication Date May 10, 2019
Language en - English
Page Count
Revision Level
Supercedes
Committee EPL/47
Loading...

Failed to load document history.

Publish Date Document Id Type View