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BSI BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Test method for defects using optical inspection
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BSI BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Test method for defects using optical inspection

PUBLISH DATE 2019
PAGES 28
BSI BS IEC 63068-2:2019
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

 

SDO BSI: British Standards Institution
Document Number IEC 63068-2
Publication Date Feb. 8, 2019
Language en - English
Page Count
Revision Level
Supercedes
Committee EPL/47
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