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BSI BS IEC 63068-3:2020

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Test method for defects using photoluminescence
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BSI BS IEC 63068-3:2020

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Test method for defects using photoluminescence

PUBLISH DATE 2020
PAGES 28
BSI BS IEC 63068-3:2020
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
SDO BSI: British Standards Institution
Document Number IEC 63068-3
Publication Date July 24, 2020
Language en - English
Page Count 28
Revision Level
Supercedes
Committee EPL/47
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