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BSI BS IEC 63229:2021

Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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BSI BS IEC 63229:2021

Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

PUBLISH DATE 2023
PAGES 24
BSI BS IEC 63229:2021
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
SDO BSI: British Standards Institution
Document Number IEC 63229
Publication Date Aug. 31, 2023
Language en - English
Page Count 24
Revision Level
Supercedes
Committee EPL/47
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