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BSI BS IEC 63601:2026

Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion
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BSI BS IEC 63601:2026

Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion

PUBLISH DATE 2026
PAGES 50
BSI BS IEC 63601:2026

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SDO BSI: British Standards Institution
Document Number IEC 63601
Publication Date Feb. 10, 2026
Language en - English
Page Count 50
Revision Level
Supercedes
Committee EPL/47
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