Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.
The method is applicable to the following:
elements of atomic number from 16 (S) to 92 (U);
contamination elements with atomic surface densities from 1Â Ă—Â 1010 atoms/cm2 to 1Â Ă—Â 1014 atoms/cm2;
contamination elements with atomic surface densities from 5Â Ă—Â 108 atoms/cm2 to 5Â Ă—Â 1012Â atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).
| SDO | BSI: British Standards Institution |
| Document Number | ISO 14706 |
| Publication Date | July 31, 2014 |
| Language | en - English |
| Page Count | |
| Revision Level | |
| Supercedes | |
| Committee | CII/60 |
Failed to load document history.
| Publish Date | Document Id | Type | View |
|---|