Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1Â Ă—Â 1016Â atoms/cm3 and 1Â Ă—Â 1020Â atoms/cm3, and to crater depths of 50Â nm or deeper.
| SDO | BSI: British Standards Institution |
| Document Number | ISO 17560 |
| Publication Date | Sept. 30, 2014 |
| Language | en - English |
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| Supercedes | |
| Committee | CII/60 |
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