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BSI BS ISO 23812:2009

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials
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BSI BS ISO 23812:2009

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials

PUBLISH DATE 2009
PAGES 30
BSI BS ISO 23812:2009

1.1

This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

1.2 This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

1.3 This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

SDO BSI: British Standards Institution
Document Number ISO 23812
Publication Date May 31, 2009
Language en - English
Page Count
Revision Level
Supercedes
Committee CII/60
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