Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials
1.1
This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50Â nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
1.2 This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
1.3 This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
| SDO | BSI: British Standards Institution |
| Document Number | ISO 23812 |
| Publication Date | May 31, 2009 |
| Language | en - English |
| Page Count | |
| Revision Level | |
| Supercedes | |
| Committee | CII/60 |
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