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BSI PD IEC TS 62607-6-16:2022

Nanomanufacturing. Key control characteristics -- Two-dimensional materials. Carrier concentration: Field effect transistor method
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BSI PD IEC TS 62607-6-16:2022

Nanomanufacturing. Key control characteristics -- Two-dimensional materials. Carrier concentration: Field effect transistor method

PUBLISH DATE 2022
PAGES 26
BSI PD IEC TS 62607-6-16:2022

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SDO BSI: British Standards Institution
Document Number IEC TS 62607-6-16
Publication Date Nov. 29, 2022
Language en - English
Page Count 26
Revision Level
Supercedes
Committee NTI/1
Publish Date Document Id Type View
Nov. 29, 2022 PD IEC TS 62607-6-16:2022 Revision