+1 888 608-7511
Need help finding a standard?
Help Desk
Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation
This Technical Report specifies a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use.
The WoRM is in the form of a polished (or similarly smooth-faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion-implanted with nominally one isotope of a chemical element (also referred to as the analyte), not already present in the host, to a nominal areic dose normally within the range 1016 atoms/cm2 to 1013 atoms/cm2 (i.e. the range of primary interest in semiconductor technology).
The areic dose of the ion-implanted analyte retained in the WoRM wafer is certified against the areic dose of the same analyte retained in an ion-implanted silicon wafer having the status of a (preferably certified) secondary reference material (SeRM).
Information is provided on the concept and the procedure for certification of the WoRM.
There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification.
Supporting information on:
is provided in Annexes A to D.
Sources and magnitudes of uncertainties arising in the certification process are detailed in Annex E.
Failed to load document history.
| Publish Date | Document Id | Type | View |
|---|