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IEC 60747-7 Ed. 3.1 b:2019

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
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IEC 60747-7 Ed. 3.1 b:2019

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

PUBLISH DATE 2019
PAGES 426
IEC 60747-7 Ed. 3.1 b:2019

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

IEC 60747-7:2010+A1:2019 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors:

  • Small signal transistors (excluding switching and microwave applications);
  • Linear power transistors (excluding switching, high-frequency, and microwave applications);
  • High-frequency power transistors for amplifier and oscillator applications;
  • Switching transistors for high speed switching and power switching applications;
  • Resistor biased transistors.

The main changes with respect to previous edition are listed below.

  • a) Clause 1 was amended by adding an item that should be included.
  • b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included.
  • c) The text of the second edition was combined with that of IEC 60747-7-5.

This publication is to be read in conjunction with IEC 60747-1:2006.

This consolidated version consists of the third edition (2010) and its amendment 1 (2019). Therefore, no need to order amendments in addition to this publication.

SDO IEC: International Electrotechnical Commission
Document Number IEC 60747
Publication Date Sept. 1, 2019
Language b - English & French
Page Count
Revision Level 3.1
Supercedes
Committee 47E
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