IEC 60747-9 Ed. 3.0 b:2019

Current Revision
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

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Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

PUBLISH DATE 2019
PAGES 164

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

This third edition includes the following significant technical changes with respect to the previous edition:

  • reverse-blocking IGBT and its related technical contents have been added;
  • reverse-conducting IGBT and its related technical contents have been added;
  • some parts of the previous edition have been amended, combined or deleted.
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