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IEC 62047-16 Ed. 1.0 b:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
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IEC 62047-16 Ed. 1.0 b:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

PUBLISH DATE 2015
PAGES 26
IEC 62047-16 Ed. 1.0 b:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 ÎĽ to 10 ÎĽ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62047
Publication Date March 5, 2015
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47F
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