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IEC 62047-26 Ed. 1.0 b:2016

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
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IEC 62047-26 Ed. 1.0 b:2016

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

PUBLISH DATE 2016
PAGES 62
IEC 62047-26 Ed. 1.0 b:2016

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures.

For trench structures, this standard applies to structures with:

  • a depth of 1 µm to 100 µm;
  • walls and trenches with respective widths of 5 µm to 150 µm;
  • an aspect ratio of 0.0067 to 20.

For needle structures, the standard applies to structures with three or four faces with:

  • a height, horizontal width and vertical width of 2 µm or larger;
  • dimensions that fit inside a cube with sides of 100 µm.

This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62047
Publication Date Jan. 1, 2016
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47F
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