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IEC 62047-29 Ed. 1.0 en:2017

Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
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IEC 62047-29 Ed. 1.0 en:2017

Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature

PUBLISH DATE 2017
PAGES 16
IEC 62047-29 Ed. 1.0 en:2017

Semiconductor devices - Micro-electromechanical devices - Part 29:

Electromechanical relaxation test method for freestanding conductive thin-films under room temperature.

IEC 62047-29:2017(E) specifies a relaxation test method for measuring electromechanical properties of freestanding conductive thin films for micro-electromechanical systems (MEMS) under controlled strain and room temperature.

Freestanding thin films of conductive materials are extensively utilized in MEMS, opto-electronics, and flexible/wearable electronics products.

Freestanding thin films in the products experience external and internal stresses which could be relaxed even under room temperature during a period of operation, and this relaxation leads to time-dependent variation of electrical performances of the products.

This test method is valid for isotropic, homogeneous, and linearly viscoelastic materials.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62047
Publication Date Nov. 1, 2017
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 47F
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