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IEC 62047-35 Ed. 1.0 b:2019

Semiconductor devices – Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices
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IEC 62047-35 Ed. 1.0 b:2019

Semiconductor devices – Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices

PUBLISH DATE 2019
IEC 62047-35 Ed. 1.0 b:2019

Semiconductor devices – Micro-electromechanical devices - Part 35:

Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices

IEC 62047-35:2019 specifies the test method of electrical characteristics under bending deformation for flexible electromechanical devices.

These devices include passive micro components and/or active micro components on the flexible film or embedded in the flexible film.

The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 mm to 1 mm, but these are not limiting values.

The test method is so designed as to bend devices in a quasi-static manner monotonically up to the maximum possible curvature, i.e. until the device is completely folded, so that the entire degradation behaviour of the electric property under bending deformation is obtained.

This document is essential to estimate the safety margin under a certain bending deformation and indispensable for reliable design of the product employing these devices.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62047
Publication Date Nov. 1, 2019
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47F
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