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IEC 62047-9 Ed. 1.0 b:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
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IEC 62047-9 Ed. 1.0 b:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

PUBLISH DATE 2011
PAGES 54
IEC 62047-9 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters.
SDO IEC: International Electrotechnical Commission
Document Number IEC 62047
Publication Date July 1, 2011
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47F
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