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IEC 62418 Ed. 1.0 b:2010

Semiconductor devices - Metallization stress void test
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IEC 62418 Ed. 1.0 b:2010

Semiconductor devices - Metallization stress void test

PUBLISH DATE 2010
PAGES 38
IEC 62418 Ed. 1.0 b:2010
Semiconductor devices - Metallization stress void test
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.
SDO IEC: International Electrotechnical Commission
Document Number IEC 62418
Publication Date April 1, 2010
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47
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