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IEC 62979 Ed. 1.0 en:2017

Photovoltaic modules - Bypass diode - Thermal runaway test
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IEC 62979 Ed. 1.0 en:2017

Photovoltaic modules - Bypass diode - Thermal runaway test

PUBLISH DATE 2017
PAGES 18
IEC 62979 Ed. 1.0 en:2017
Photovoltaic modules - Bypass diode - Thermal runaway test
IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62979
Publication Date Aug. 1, 2017
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 82
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