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IEC 63068-2 Ed. 1.0 en:2019

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
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IEC 63068-2 Ed. 1.0 en:2019

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

PUBLISH DATE 2019
PAGES 30
IEC 63068-2 Ed. 1.0 en:2019
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

 

SDO IEC: International Electrotechnical Commission
Document Number IEC 63068
Publication Date Jan. 1, 2019
Language en - English
Page Count 30
Revision Level 1.0
Supercedes
Committee 47
Publish Date Document Id Type View
Jan. 1, 2019 Revision
Jan. 1, 2019 IEC 63068-2 Ed. 1.0 en:2019 Revision