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IEC 63229 Ed. 1.0 en:2021

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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IEC 63229 Ed. 1.0 en:2021

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

PUBLISH DATE 2021
PAGES 26
IEC 63229 Ed. 1.0 en:2021
Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
SDO IEC: International Electrotechnical Commission
Document Number IEC 63229
Publication Date April 1, 2021
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 47
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