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IEC 63284 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
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IEC 63284 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

PUBLISH DATE 2022
PAGES 30
IEC 63284 Ed. 1.0 b:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
SDO IEC: International Electrotechnical Commission
Document Number IEC 63284
Publication Date April 1, 2022
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47
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