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IEC/TS 62607-6-27 Ed. 1.0 en:2025

Nanomanufacturing - Key control characteristics - Part 6-27: Graphene-related products - Field-effect mobility for layers of two-dimensional materials: field-effect transistor method
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IEC/TS 62607-6-27 Ed. 1.0 en:2025

Nanomanufacturing - Key control characteristics - Part 6-27: Graphene-related products - Field-effect mobility for layers of two-dimensional materials: field-effect transistor method

IEC/TS 62607-6-27 Ed. 1.0 en:2025

IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic field-effect mobility for semiconducting two-dimensional (2D) materials by the field-effect transistor (FET) method.

For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.

  • This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).
  • The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables.
SDO IEC: International Electrotechnical Commission
Document Number IEC/TS 62607
Publication Date Not Available
Language en - English
Page Count 24
Revision Level 1.0
Supercedes
Committee 113
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