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IEEE 641-1987

IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays
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IEEE 641-1987

IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

PUBLISH DATE 1988
PAGES 34
IEEE 641-1987

New IEEE Standard - Inactive-Withdrawn.

This standard has ten sections:

  • an introduction to the MNOS device and memory array;
  • symbols and definitions;
  • references that contain added detail on specific concepts;
  • MNOS arrays and functional operations;
  • MNOS array retention;
  • MNOS array endurance property;
  • reliability considerations for MNOS arrays;
  • the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer;
  • radiation effects on MNOS arrays; and
  • nonvolatile memory technology, called floating-gate.
SDO IEEE: Institute of Electrical and Electronics Engineers
Document Number 641
Publication Date Oct. 7, 1988
Language en - English
Page Count 34
Revision Level
Supercedes
Committee
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