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IEEE C62.42.3-2017

IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction
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IEEE C62.42.3-2017

IEEE Guide for the Application of Surge Protective Components in Surge Protective Devices and Equipment Ports -- Part 3: Silicon PN-Junction

PUBLISH DATE 2018
PAGES 42
IEEE C62.42.3-2017

New IEEE Standard - Active.

Surge protective components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports are covered in the IEEE C62.42™ guide series.

This part, Part 3 of the series, describes silicon PN-Junction clamping diode SPCs and covers technology variants, including:

  • forward biased semiconductor diodes,
  • Zener breakdown semiconductor diodes,
  • avalanche breakdown semiconductor diodes,
  • punch-through semiconductor bipolar junction transistor diodes, and
  • fold-back semiconductor bidirectional transistor diodes,

as well as component construction; characteristics; ratings; and application examples.

The C62.42(TM) guide series covers surge protective components (SPCs) used in power and telecom surge protective devices (SPDs) and equipment ports.

This part, Part 3 of the C62.42 series, describes Silicon PN-Junction Clamping Diode SPCs and covers:

  • Technology variants
    • Forward biased semiconductor diodes
    • Zener breakdown semiconductor diodes
    • Avalanche breakdown semiconductor diodes
    • Punch-through semiconductor bipolar junction transistor diodes
    • Fold-back semiconductor bidirectional transistor diodes
  • Component construction
  • Characteristics
  • Ratings
  • Application examples
SDO IEEE: Institute of Electrical and Electronics Engineers
Document Number C62.42.3
Publication Date March 13, 2018
Language en - English
Page Count 42
Revision Level
Supercedes
Committee Surge Protective Devices/Low Voltage
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