ISO 12406:2010

Current Revision
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon

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ISO 12406:2010

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon

PUBLISH DATE 2010
ISO 12406:2010

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration.

This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2.5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

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