ISO 23812:2009

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Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials

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ISO 23812:2009

Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials

PUBLISH DATE 2009
ISO 23812:2009

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to:

  • single-crystalline silicon,
  • polycrystalline silicon, and
  • amorphous silicon.
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