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Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for GaN crystal surface defects - Part 2: Method for determining etch pit density
This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.
It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films:
It is applicable to defects with an etch pit density of 7 × 107 cm-2.
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