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BSI BS EN IEC 60749-23:2026

Semiconductor devices. Mechanical and climatic test methods -- High temperature operating life
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BSI BS EN IEC 60749-23:2026

Semiconductor devices. Mechanical and climatic test methods -- High temperature operating life

PUBLISH DATE 2026
PAGES 14
BSI BS EN IEC 60749-23:2026
IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as 'burn-in', can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document. This edition includes the following significant technical changes with respect to the previous edition: a) absolute stress test definitions and resultant test durations have been updated.
SDO BSI: British Standards Institution
Document Number IEC 60749-23
Publication Date Feb. 3, 2026
Language en - English
Page Count 14
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
Feb. 3, 2026 BS EN IEC 60749-23:2026 Revision