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IEC 60749-23 Ed. 2.0 en:2025

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
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IEC 60749-23 Ed. 2.0 en:2025

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

IEC 60749-23 Ed. 2.0 en:2025
IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document.
This edition includes the following significant technical changes with respect to the previous edition:
a) absolute stress test definitions and resultant test durations have been updated.
SDO IEC: International Electrotechnical Commission
Document Number IEC 60749
Publication Date Not Available
Language en - English
Page Count 14
Revision Level 2.0
Supercedes
Committee 47
Publish Date Document Id Type View
Not Available IEC 60749-23 Ed. 2.0 en:2025 Revision
Not Available IEC 60749-23 Ed. 2.0 b:2025 Revision
March 1, 2011 Revision
March 1, 2011 IEC 60749-23 Ed. 1.1 b:2011 Revision
Feb. 1, 2004 IEC 60749-23 Ed. 1.0 b:2004 Revision
Feb. 1, 2004 Revision