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BSI BS ISO 14701:2018

Surface chemical analysis. X-ray photoelectron spectroscopy. Measurement of silicon oxide thickness
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BSI BS ISO 14701:2018

Surface chemical analysis. X-ray photoelectron spectroscopy. Measurement of silicon oxide thickness

PUBLISH DATE 2018
PAGES 24
BSI BS ISO 14701:2018

This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

SDO BSI: British Standards Institution
Document Number ISO 14701
Publication Date Nov. 5, 2018
Language en - English
Page Count 24
Revision Level
Supercedes
Committee CII/60
Publish Date Document Id Type View
Nov. 5, 2018 BS ISO 14701:2018 Revision
Aug. 31, 2011 BS ISO 14701:2011 Revision