ISO 14701:2018

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Surface chemical analysis - X-ray photoelectron spectroscopy - Measurement of silicon oxide thickness

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ISO 14701:2018

Surface chemical analysis - X-ray photoelectron spectroscopy - Measurement of silicon oxide thickness

PUBLISH DATE 2018
ISO 14701:2018

This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an *equivalent thickness of silicon dioxide* when measured using X-ray photoelectron spectroscopy.

It is only applicable to flat, polished samples and for instruments that incorporate:

  • an Al or Mg X-ray source,
  • a sample stage that permits defined photoelectron emission angles, and
  • a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle.

For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum.

A simpler method is also given with slightly poorer, but often adequate, uncertainties.

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