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IEC/TS 62607-6-16 Ed. 1.0 en:2022

Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
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International Electrotechnical Commission Logo

IEC/TS 62607-6-16 Ed. 1.0 en:2022

Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method

PUBLISH DATE 2022
IEC/TS 62607-6-16 Ed. 1.0 en:2022
Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic
  • carrier concentration
for semiconducting two-dimensional materials by the
  • field effect transistor (FET) method.
For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.
SDO IEC: International Electrotechnical Commission
Document Number IEC/TS 62607
Publication Date Nov. 1, 2022
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 113
Publish Date Document Id Type View
June 5, 2024 Revision
Nov. 1, 2022 IEC/TS 62607-6-16 Ed. 1.0 en:2022 Revision