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IEC/TS 62607-6-14 Ed. 1.0 en:2020

Nanomanufacturing - Key control characteristics - Part 6-14: Graphene-based material - Defect level: Raman spectroscopy
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IEC/TS 62607-6-14 Ed. 1.0 en:2020

Nanomanufacturing - Key control characteristics - Part 6-14: Graphene-based material - Defect level: Raman spectroscopy

PUBLISH DATE 2020
IEC/TS 62607-6-14 Ed. 1.0 en:2020
Nanomanufacturing - Key control characteristics - Part 6-14: Graphene-based material - Defect level: Raman spectroscopy
IEC TS 62607-6-14:2020 establishes a standardized method to determine the structural key control characteristic
• defect level
for powders consisting of graphene-based material by
• Raman spectroscopy.
The defect level is derived by the intensity ratio of the D+D band and 2D band in Raman spectrum, ID+D /I2D.
• The defect level determined in accordance with this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1 for graphene powder.
• The method is applicable for graphene powder or graphene-based material, e.g. reduced graphene oxide (rGO), bilayer graphene, trilayer graphene and few-layer graphene.
• Typical application areas are quality control and classification for graphene manufacturers, and product selection for downstream users.
• The method described in this document is appropriate if the physical form of graphene is powder.
SDO IEC: International Electrotechnical Commission
Document Number IEC/TS 62607
Publication Date Oct. 1, 2020
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 113
Publish Date Document Id Type View
June 5, 2024 Revision
Oct. 1, 2020 IEC/TS 62607-6-14 Ed. 1.0 en:2020 Revision